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Effect of high-energy neutrons on MuGFETs
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Document type | Article de périodique (Journal article) – Article de recherche |
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Access type | Accès restreint |
Publication date | 2010 |
Language | Anglais |
Journal information | "Solid-State Electronics" - Vol. 54, p. 196-204 (2009) |
Peer reviewed | yes |
Publisher | Pergamon ((United Kingdom) Kidlington) |
issn | 0038-1101 |
e-issn | 1879-2405 |
Publication status | Publié |
Affiliations |
UCL
- SST/ICTM/ELEN - Pôle en ingénierie électrique UCL - SST/CRC - Centre de ressources du cyclotron |
Keywords | Multiple-Gate FETs ; FinFETs ; Irradiation ; High-energy neutrons ; Total-dose effects ; Charge build-up ; Interface traps ; Gate edge/spacer effect |
Links |
Bibliographic reference | Kilchytska, Valeriya ; Alvarado Pulido, José Joaquin ; Collaert, N. ; Rooyakers, R. ; Militaru, Otilia ; et. al. Effect of high-energy neutrons on MuGFETs. In: Solid-State Electronics, Vol. 54, p. 196-204 (2009) |
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Permanent URL | http://hdl.handle.net/2078.1/157250 |