User menu

Direct growth of graphene on Si(111)

Bibliographic reference Thanh Trung, Pham ; Campos Delgado, Jessica ; Joucken, Frédéric ; Colomer, Jean-François ; Hackens, Benoît ; et. al. Direct growth of graphene on Si(111). In: Journal of Applied Physics, Vol. 115, no.223704, p. 223704 (10 June 2014)
Permanent URL
  1. Novoselov K. S., Electric Field Effect in Atomically Thin Carbon Films, 10.1126/science.1102896
  2. Geim A. K., Novoselov K. S., The rise of graphene, 10.1038/nmat1849
  3. Liu Wei, Chung Choong-Heui, Miao Cong-Qin, Wang Yan-Jie, Li Bi-Yun, Ruan Ling-Yan, Patel Ketan, Park Young-Ju, Woo Jason, Xie Ya-Hong, Chemical vapor deposition of large area few layer graphene on Si catalyzed with nickel films, 10.1016/j.tsf.2009.10.070
  4. Park Hye Jin, Meyer Jannik, Roth Siegmar, Skákalová Viera, Growth and properties of few-layer graphene prepared by chemical vapor deposition, 10.1016/j.carbon.2009.11.030
  5. Howsare Casey A, Weng Xiaojun, Bojan Vince, Snyder David, Robinson Joshua A, Substrate considerations for graphene synthesis on thin copper films, 10.1088/0957-4484/23/13/135601
  6. Lee J.-H., Lee E. K., Joo W.-J., Jang Y., Kim B.-S., Lim J. Y., Choi S.-H., Ahn S. J., Ahn J. R., Park M.-H., Yang C.-W., Choi B. L., Hwang S.-W., Whang D., Wafer-Scale Growth of Single-Crystal Monolayer Graphene on Reusable Hydrogen-Terminated Germanium, 10.1126/science.1252268
  7. Suemitsu M, Fukidome H, Epitaxial graphene on silicon substrates, 10.1088/0022-3727/43/37/374012
  8. Gupta B., Notarianni M., Mishra N., Shafiei M., Iacopi F., Motta N., Evolution of epitaxial graphene layers on 3C SiC/Si (111) as a function of annealing temperature in UHV, 10.1016/j.carbon.2013.11.035
  9. Hackley J., Ali D., DiPasquale J., Demaree J. D., Richardson C. J. K., Graphitic carbon growth on Si(111) using solid source molecular beam epitaxy, 10.1063/1.3242029
  10. Tang J., Kang C.Y., Li L.M., Yan W.S., Wei S.Q., Xu P.S., Graphene films grown on Si substrate via direct deposition of solid-state carbon atoms, 10.1016/j.physe.2011.03.014
  11. Thanh Trung Pham, Joucken Frédéric, Campos-Delgado Jessica, Raskin Jean-Pierre, Hackens Benoît, Sporken Robert, Direct growth of graphitic carbon on Si(111), 10.1063/1.4773989
  12. Liu Zhongliang, Liu Jinfeng, Ren Peng, Wu Yuyu, Xu Pengshou, Effects of carbonization and substrate temperature on the growth of 3C–SiC on Si(111) by SSMBE, 10.1016/j.apsusc.2007.10.085
  13. Cullity B. D., Elements of X-ray Diffraction (2001)
  14. Johansson L.I, Glans P.-A, Hellgren N, A core level and valence band photoemission study of 6H-SiC, 10.1016/s0039-6028(98)00086-7
  15. Cançado L. G., Takai K., Enoki T., Endo M., Kim Y. A., Mizusaki H., Jorio A., Coelho L. N., Magalhães-Paniago R., Pimenta M. A., General equation for the determination of the crystallite size La of nanographite by Raman spectroscopy, 10.1063/1.2196057
  16. Zhang L., Sci. Rep., 3, 1408 (2013)
  17. Wang Yongfeng, Ye Yingchun, Wu Kai, Simultaneous observation of the triangular and honeycomb structures on highly oriented pyrolytic graphite at room temperature: An STM study, 10.1016/j.susc.2005.12.001