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Dependence of the Optimum Length of Lightly Doped Region of GC SOI nMOSFET with Front Gate Bias

Bibliographic reference Assalti, R. ; Pavanello, Marcelo Antonio ; Flandre, Denis ; de Souza, Michelly. Dependence of the Optimum Length of Lightly Doped Region of GC SOI nMOSFET with Front Gate Bias.29th Symposium on Microelectronics Technology and Devices (SBMicro 2014) (Aracaju (Brazil), du 01/09/2014 au 05/09/2014).
Permanent URL http://hdl.handle.net/2078.1/152091