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Boosting the Radiation Hardness and Higher Reestablishing Pre-Rad Conditions by Using OCTO Layout Style for MOSFETs

Bibliographic reference de Souza Fino, Leonardo Navarenho ; Aparecida Guazzelli da Silveira, Marcilei ; Renaux, Christian ; Flandre, Denis ; Pinillos Gimenez, Salvador. Boosting the Radiation Hardness and Higher Reestablishing Pre-Rad Conditions by Using OCTO Layout Style for MOSFETs.29th Symposium on Microelectronics Technology and Devices (SBMicro 2014) (Aracaju (Brazil), du 02/09/2014 au 05/09/2014). In: Proceedings of SBMicro 2014, 2014, p.1-8
Permanent URL http://hdl.handle.net/2078.1/152088