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UHV fabrication of the ytterbium silicide as potential low Schottky barrier S/D contact material for n-type MOSFET

Bibliographic reference Yarekha, Dmytro A. ; Larrieu, Guilhem ; Nreil, Nicolas ; Dubois, Emmanuel ; Godey, S. ; et. al. UHV fabrication of the ytterbium silicide as potential low Schottky barrier S/D contact material for n-type MOSFET.Meeting of the Electrochemical Society 2009 (San Francisco (USA), du 24/05/2009 au 29/05/2009).
Permanent URL http://hdl.handle.net/2078.1/135229