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Charge trapping phenomena in single electron NVM SOI devices fabricated by a self-aligned quantum dot technology

Bibliographic reference Nazarov, Alexei ; Lysenko, V.S. ; Tang, Xiaohui ; Reckinger, Nicolas ; Bayot, Vincent. Charge trapping phenomena in single electron NVM SOI devices fabricated by a self-aligned quantum dot technology. In: Hall, S.; Nazarov, A.N.; Lysenko, V.S., Nanoscaled semiconductor-on-insulator structures and devices, Springer  : Berlin (Germany) 2007, p. 251-256
Permanent URL http://hdl.handle.net/2078.1/135190