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Self-aligned single-electron memories: towards single-electron operation of MOS compatible nano-flash memory devices
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| Document type | Communication à un colloque (Conference Paper) – Présentation orale avec comité de sélection |
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| Publication date | 2005 |
| Language | Anglais |
| Conference | "SINANO-ESSDERC Workshop 2005", Grenoble (France) (16/09/2005) |
| Peer reviewed | yes |
| Host document | "Proceedings of the SINANO-ESSDERC Workshop 2005" |
| Affiliation | UCL - FSA/ELEC - Département d'électricité |
| Keywords | Single-electron memory ; MOS ; Nano-flash memory devices |
| Links |
| Bibliographic reference | Tang, Xiaohui ; Reckinger, Nicolas ; Bayot, Vincent ; Dubois, Emmanuel ; Krzeminski, C.. Self-aligned single-electron memories: towards single-electron operation of MOS compatible nano-flash memory devices.SINANO-ESSDERC Workshop 2005 (Grenoble (France), 16/09/2005). In: Proceedings of the SINANO-ESSDERC Workshop 2005, 2005 |
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| Permanent URL | http://hdl.handle.net/2078.1/135122 |