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Fabrication process of Si memory dot and quantum channel based on as dopant statistical distribution effect

Bibliographic reference Tang, Xiaohui ; Baie, Xavier ; Colinge, Jean-Pierre. Fabrication process of Si memory dot and quantum channel based on as dopant statistical distribution effect.International Conference on Solid-State Devices and Materials (SSDM 1997) (Hamamatsu (Japan), du 16/09/1997 au 20/09/1997). In: Proceedings of the International Conference on Solid-State Devices and Materials (SSDM 1997), 1997, p. 484-485
Permanent URL http://hdl.handle.net/2078.1/133544