Fabrication process of Si memory dot and quantum channel based on as dopant statistical distribution effect

Single-electron memory, which operation is based on the storage of very few electrons (possibly one) in a memory dot embedded between a MOSFET channel and a control gate, has recently attracted much attraction. This is mainly due to n emerging demand for high density and low power dissipation in future integrated circuit devices; It is very important to develop a simple process in the fabrication technology of Si single-electron memory. Up to now, there have been several reports about fabrication process of single-electron memory on Si substrates and SOI wafers [1][3], however, these processes utilized very fine electron-beam lithography and complicated technology. This paper purposes to develop a simple fabrication process of Si single-electron memory based on As dopant effect in accordance with the mechanism described below.