Rudenko, A.N.
[Institute of Semiconductor Physics of Ukraine]
Nazarov, Alexei
[Institute of Semiconductor Physics of Ukraine]
Lysenko, V.S.
[Institute of Semiconductor Physics of Ukraine]
Kilchytska, Valeriya
[Institute of Semiconductor Physics of Ukraine]
Rudenko, Tamara
[Institute of Semiconductor Physics of Ukraine]
Djurenko, S.V.
[Institute of Semiconductor Physics of Ukraine]
The high radiation tolerance of SOI CMOS ICs to transient radiation effects and single event upset is well known [1], however, in contrast SOI CMOS devices are known to be rather susceptible to total-dose radiation effects. This sensitivity to total-dose exposure is associated with radiation-induced positive charge trapping in the thick buried oxides, which results in parasitic back-channel conduction in n-channel MOSFETs [2]. The most widely used method to suppress the radiation-induced back-channel conduction is additional doping of the Si film near the silicon film — buried insulator interface [3], however, at high irradiation doses this method is not always adequate.
Bibliographic reference |
Rudenko, A.N. ; Nazarov, Alexei ; Lysenko, V.S. ; Kilchytska, Valeriya ; Rudenko, Tamara ; et. al. Total dose radiation response of multilayer buried insulators. In: Peter L. F. Hemment, V. S. Lysenko, A. N. Nazarov, Perspectives, Science and Technologies for Novel Silicon on Insulator Devices, Springer : The Netherlands 2000, p. 205-212 |
Permanent URL |
http://hdl.handle.net/2078.1/132880 |