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New evidence of interfacial oxide traps in n-type 4H- and 6H-SiC MOS structures

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Olafsson, H.O. [Chalmers University of Technology, Göteborg] Sveinbjornsson, E.O. [Chalmers University of Technology, Göteborg] Rudenko, Tamara [National Academy of Sciences of Ukraine] Kilchytska, Valeriya [UCL] Tyagulski, I. [National Academy of Sciences of Ukraine] Osiyuk, I. [National Academy of Sciences of Ukraine]

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Document type Communication à un colloque (Conference Paper) – Présentation orale avec comité de sélection
Publication date 2001
Language Anglais
Conference "2001 International conference on silicon carbide and related materials (ICSCRM 2001)", Tsukuba (Japan) (du 28/10/2001 au 02/11/2001)
Peer reviewed yes
Host document S.Yoshida, S.Nishino, T.Kimoto ; "Material Science Forum Series"- p. 1001-1004
Publisher Trans Tech Publications (Zurich (Switserland))
Publication status Publié
Affiliation UCL - FSA/ELEC - Département d'électricité
Keywords MOS structures
Links
Bibliographic reference Olafsson, H.O. ; Sveinbjornsson, E.O. ; Rudenko, Tamara ; Kilchytska, Valeriya ; Tyagulski, I. ; et. al. New evidence of interfacial oxide traps in n-type 4H- and 6H-SiC MOS structures.2001 International conference on silicon carbide and related materials (ICSCRM 2001) (Tsukuba (Japan), du 28/10/2001 au 02/11/2001). In: S.Yoshida, S.Nishino, T.Kimoto, Material Science Forum Series, Trans Tech Publications : Zurich (Switserland)2001, p. 1001-1004
Permanent URL http://hdl.handle.net/2078.1/132792