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Transition from ballistic to ohmic transport in Tbranch Junctions at room temperature in GaInAs/AlInAs heterostructures

Bibliographic reference Galloo, J. ; Pichonat, E. ; Roelens, Y. ; Bollaert, S. ; Wallart, X. ; et. al. Transition from ballistic to ohmic transport in Tbranch Junctions at room temperature in GaInAs/AlInAs heterostructures.IPRM 2004 Conference (16th International Conference on Indium Phosphide and Related Materials) (Kagoshima, Japan, du 31/05/2004 au 04/06/2004). In: Proceedings of the IPRM 2004 Conference (16th International Conference on Indium Phosphide and Related Materials), 2004, p.pp. 378-381
Permanent URL http://hdl.handle.net/2078.1/131151