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DC and RF characteristics of a 60 nm FinFET for a wide temperature range

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Tinoco, Julio [UCL] Parvais, Bertrand [IMEC, Leuven, Belgium] Mercha, A. [IMEC, Leuven, Belgium] Decoutere, S. [IMEC, Leuven, Belgium] Raskin, Jean-Pierre [UCL]

DC and RF characteristics of n-type FinFET transistor over a wide temperature range, from 77 to 473K, are presented for the first time. We experimentally demonstrate that the impact of temperature on the main analog and RF factors of merit of FinFETs is similar to what it can be observed for classical deep submicron single gate MOSFETs.

Document type Communication à un colloque (Conference Paper) – Présentation orale avec comité de sélection
Publication date 2008
Language Anglais
Conference "Fourth Workshop of the Thematic Network on Silicon on Insulator technology, devices and circuits – EuroSOI’08", Tyndall National Institute, Cork, Ireland (du 23/01/2008 au 25/01/2008)
Peer reviewed yes
Host document "Proceedings of the Fourth Workshop of the Thematic Network on Silicon on Insulator technology, devices and circuits – EuroSOI’08"- pp. 57-58
Publication status Publié
Affiliation UCL - SST/ICTM/ELEN - Pôle en ingénierie électrique
Keywords NANO
Links
Bibliographic reference Tinoco, Julio ; Parvais, Bertrand ; Mercha, A. ; Decoutere, S. ; Raskin, Jean-Pierre. DC and RF characteristics of a 60 nm FinFET for a wide temperature range.Fourth Workshop of the Thematic Network on Silicon on Insulator technology, devices and circuits – EuroSOI’08 (Tyndall National Institute, Cork, Ireland, du 23/01/2008 au 25/01/2008). In: Proceedings of the Fourth Workshop of the Thematic Network on Silicon on Insulator technology, devices and circuits – EuroSOI’08, 2008, p.pp. 57-58
Permanent URL http://hdl.handle.net/2078.1/130615