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Analog Behavior of Submicron Graded-Channel SOI MOSFETs Varying the Channel Length, Doping Concentration and Temperature

Bibliographic reference Nemer, J.P. ; de Souza, Michelly ; Flandre, Denis ; Pavanello, Marcelo Antonio. Analog Behavior of Submicron Graded-Channel SOI MOSFETs Varying the Channel Length, Doping Concentration and Temperature. In: ECS Transactions, Vol. 53, no.5, p. 149-154 (2013)
Permanent URL http://hdl.handle.net/2078.1/129215