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Asymmetric channel doping profile and temperature reduction influence on the performance of current mirrors implemented with FD SOI nMOSFETs

Bibliographic reference de Souza, Michelly ; Cardoso Paz, Bruna ; Flandre, Denis ; Pavanello, Marcelo Antonio. Asymmetric channel doping profile and temperature reduction influence on the performance of current mirrors implemented with FD SOI nMOSFETs. In: Microelectronics Reliability, p. 848-855 (06/04/2013)
Permanent URL http://hdl.handle.net/2078.1/127875