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Improved modeling of gate leakage currents for fin-shaped field-effect transistors

Bibliographic reference Garduῆo, S.I. ; Cerdeira, Antonio ; Estrada, Magali ; Alvarado Pulido, José Joaquin ; Kilchytska, Valeriya ; et. al. Improved modeling of gate leakage currents for fin-shaped field-effect transistors. In: Journal of Applied Physics, Vol. 113, no.124507, p. 124507/1-9 (28/03/2013)
Permanent URL http://hdl.handle.net/2078.1/127808
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