User menu

Correlated evolution of barrier capacitance charging, generation, and drift currents and of carrier lifetime in Si structures during 25 MeV neutrons irradiation

Bibliographic reference Gaubas, E. ; Ceponis, T. ; Jasiunas, A. ; Uleckas, A. ; Vaitkus, J. ; et. al. Correlated evolution of barrier capacitance charging, generation, and drift currents and of carrier lifetime in Si structures during 25 MeV neutrons irradiation. In: Applied Physics Letters, Vol. 101, no.--, p. 232104-1 - 232104-3 (2012)
Permanent URL http://hdl.handle.net/2078.1/127191
  1. Lutz Gerhard, Semiconductor Radiation Detectors, ISBN:9783540716785, 10.1007/978-3-540-71679-2
  2. Eremin V, Li Z, Carrier drift mobility study in neutron irradiated high purity silicon, 10.1016/0168-9002(95)00381-9
  3. Gaubas E., Kadys A., Vaitkus J., Fretwurst E., Fluence dependent carrier lifetime variations in Si detectors determined by photoconductivity and transient grating techniques, 10.1016/j.nima.2007.08.196
  4. Gaubas E., Uleckas A., Vaitkus J., Raisanen J., Tikkanen P., Instrumentation for the in situ control of carrier recombination characteristics during irradiation by protons, 10.1063/1.3429944
  5. Ceponis T, Gaubas E, Kalendra V, Uleckas A, Vaitkus J, Zilinskas K, Kovalevskij V, Gaspariunas M, Remeikis V, In situ analysis of carrier lifetime and barrier capacitance variations in silicon during 1.5 MeV protons implantation, 10.1088/1748-0221/6/09/p09002
  6. Gaubas E., Čeponis T., Vaitkus J., Raisanen J., Study of variations of the carrier recombination and charge transport parameters during proton irradiation of silicon pin diode structures, 10.1063/1.3605715
  7. Gaubas Eugenijus, Čeponis Tomas, Sakalauskas Stanislavas, Uleckas Aurimas, Velička Arūnas, Fluence dependent variations of barrier charging and generation currents in neutron and proton irradiated Si particle detectors, 10.3952/lithjphys.51308
  8. Assouak S., Forton E., Grégoire Gh., Irradiations of CMS silicon sensors with fast neutrons, 10.1016/j.nima.2003.08.099
  9. Gaubas E., Uleckas A., Vaitkus J., Spectroscopy of neutron irradiation induced deep levels in silicon by microwave probed photoconductivity transients, 10.1016/j.nima.2009.03.136