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Partially Depleted SOI Versus Deep N-Well Protected Bulk-Si MOSFETs: A High-Temperature RF Study for Low-Voltage Low-Power Applications

Bibliographic reference Emam, Mostafa ; Raskin, Jean-Pierre. Partially Depleted SOI Versus Deep N-Well Protected Bulk-Si MOSFETs: A High-Temperature RF Study for Low-Voltage Low-Power Applications. In: IEEE Transactions on Microwave Theory and Techniques, Vol. 61, no.4, p. 1496-1504 (Avril 2013)
Permanent URL http://hdl.handle.net/2078/127078