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UTBB SOI MOSFETs analog figures of merit: effect of ground plane and asymmetric double-gate regime

Bibliographic reference Md Arshad, M.K. ; Kilchytska, Valeriya ; Makovejev, Sergej ; Olsen, S.H. ; Andrieu, François ; et. al. UTBB SOI MOSFETs analog figures of merit: effect of ground plane and asymmetric double-gate regime.Eighth Workshop of the Thematic Network on Silicon on Insulator technology, devices and circuits – EuroSOI’12 (Montpellier (France), du 23/01/2012 au 25/01/2012). In: Proceedings of the Eighth Workshop of the Thematic Network on Silicon on Insulator technology, devices and circuits – EuroSOI’12, 2012, p.111-112
Permanent URL http://hdl.handle.net/2078/123601