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TCAD study of the detection mechanisms in Si-Nanoribbon gas sensors

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Silvestri, L. [University of Bologna, Italy] Reggiani, S. [University of Bologna, Italy] Passi, Vikram [UCL] Ravaux, Fabian [IEMN, Villeneuve d'Ascq, France] Dubois, E. [IEMN, Villeneuve d'Ascq, France] Raskin, Jean-Pierre [UCL]

An extensive simulation analysis of silicon-nanoribbon field-effect transistors for the detection of chemical warfare agents has been performed through investigation of the physical behavior of the device. An accurate modeling of the nanoribbon interfaces has been carried out before and after gas exposure by combining simulation, characterization techniques and validation against experiments. A quantitative description of the physical mechanisms involved in the gas detection has been obtained.

Document type Communication à un colloque (Conference Paper) – Présentation orale avec comité de sélection
Publication date 2011
Language Anglais
Conference "41st European Solid-State Device Research Conference – ESSDERC 2011", Helsinki, Finland (du 12/09/2011 au 16/09/2011)
Peer reviewed yes
Host document "Proceedings of the 41st European Solid-State Device Research Conference – ESSDERC 2011"- pp. 131-134 (ISBN : 978-1-4577-0707-0)
Publication status Publié
Affiliation UCL - SST/ICTM/ELEN - Pôle en ingénierie électrique
Keywords NANO
Links
Bibliographic reference Silvestri, L. ; Reggiani, S. ; Passi, Vikram ; Ravaux, Fabian ; Dubois, E. ; et. al. TCAD study of the detection mechanisms in Si-Nanoribbon gas sensors.41st European Solid-State Device Research Conference – ESSDERC 2011 (Helsinki, Finland, du 12/09/2011 au 16/09/2011). In: Proceedings of the 41st European Solid-State Device Research Conference – ESSDERC 2011, 2011, p.pp. 131-134
Permanent URL http://hdl.handle.net/2078/123520