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Finite element simulations of parasitic capacitances related to multiple-gate field-effect transistors architectures

Bibliographic reference Moldovan, O. ; Lederer, Dimitri ; Iniguez, B. ; Raskin, Jean-Pierre. Finite element simulations of parasitic capacitances related to multiple-gate field-effect transistors architectures.IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems - SiRF 2008 (Orlando, Florida, USA, du 23/01/2008 au 25/01/2008). In: Proceedings of the IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems - SiRF 2008, IEEE2008, p.pp. 183-186
Permanent URL http://hdl.handle.net/2078.1/123413