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DC and AC analyses of novel SOI MOSFET devices using 2-D and 3-D numerical simulations

Bibliographic reference Chung, Tsung Ming ; Raskin, Jean-Pierre. DC and AC analyses of novel SOI MOSFET devices using 2-D and 3-D numerical simulations.”, 3rd International Conference on Materials for Advanced Technologies – ICMAT 2005 and 9th International Conference on Advanced Materials (ICAM 2005) (Singapore, du 03/07/2005 au 08/07/2005). In: Proceedings of the ”, 3rd International Conference on Materials for Advanced Technologies – ICMAT 2005 and 9th International Conference on Advanced Materials (ICAM 2005), 2005, p. Paper G-6-P063
Permanent URL http://hdl.handle.net/2078.1/123208