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Self alignment method by buried mask implantation for Double Gate MOS fabrication and nano devices fabrication

Bibliographic reference Charavel, Rémy ; Raskin, Jean-Pierre. Self alignment method by buried mask implantation for Double Gate MOS fabrication and nano devices fabrication.Optical Science, Sensors and Systems Technology, Architecture, Applications (Philadelphia, Pennsylvania, USA, du 25/10/2004 au 28/10/2004). In: Proceedings of SPIE - Optical Science, Sensors and Systems Technology, Architecture, Applications, 2004, p.pp. 362-372
Permanent URL http://hdl.handle.net/2078.1/123050