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Nonlinear performance comparison for FD and PD SOI MOSFETs based on the Integral Function Method and Volterra modeling

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Parvais, Bertrand [UCL] Cerdeira, A. [K.U.L., ESAT, Leuven, Belgium] Schreurs, D. [K.U.L., ESAT, Leuven, Belgium] Raskin, Jean-Pierre [UCL]

The harmonic and intermodulation distortions of both fully-depleted (FD) and partially-depleted (PD) silicon-on-insulator (SOI) MOSFETs are studied. The analysis is based on the recently developed integral function method and the results are compared to a third-order Volterra model of the MOSFET. This modelling helps us to understand the non-linear mechanisms of the considered devices and to predict their frequency behaviour. The models are validated through large-signal network analyser measurements. The devices performances are discussed. Copyright © 2005 John Wiley & Sons, Ltd.

Document type Communication à un colloque (Conference Paper) – Présentation orale avec comité de sélection
Publication date 2004
Language Anglais
Conference "MOS-AK/ESSCIRC Compact Modeling Workshop", Leuven, Belgium (20/09/2004)
Peer reviewed yes
Host document "Proceedings of the MOS-AK/ESSCIRC Compact Modeling Workshop"- p. 19 pages
Publication status Publié
Affiliation UCL - FSA/ELEC - Département d'électricité
Links
Bibliographic reference Parvais, Bertrand ; Cerdeira, A. ; Schreurs, D. ; Raskin, Jean-Pierre. Nonlinear performance comparison for FD and PD SOI MOSFETs based on the Integral Function Method and Volterra modeling.MOS-AK/ESSCIRC Compact Modeling Workshop (Leuven, Belgium, 20/09/2004). In: Proceedings of the MOS-AK/ESSCIRC Compact Modeling Workshop, 2004, p. 19 pages
Permanent URL http://hdl.handle.net/2078.1/123026