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Noise modelling of 0.25 µm fully depleted SOI MOSFETs

Bibliographic reference Pailloncy, G. ; Dambrine, G. ; Danneville, F. ; Iniguez, B. ; Raskin, Jean-Pierre. Noise modelling of 0.25 µm fully depleted SOI MOSFETs.17th International Conference on Noise and Fluctuations – ICNF 2003 (Prague, Czech Republic, du 18/08/2003 au 22/08/2003). In: Proceedings of the 17th International Conference on Noise and Fluctuations, INCF 2003, 2003, p.pp. 577-580
Permanent URL http://hdl.handle.net/2078.1/122732