Accès à distance ? S'identifier sur le proxy UCLouvain
Microscopic analysis of high-frequency noise behaviour of Fully-Depleted Silicon-on-Insulator MOSFETs
Primary tabs
Document type | Communication à un colloque (Conference Paper) – Présentation orale avec comité de sélection |
---|---|
Publication date | 2003 |
Language | Anglais |
Conference | "17th International Conference on Noise and Fluctuations – ICNF 2003", Prague, Czech Republic (du 18/08/2003 au 22/08/2003) |
Peer reviewed | yes |
Host document | "Proceedings of the 17th International Conference on Noise and Fluctuations, ICNF 2003"- pp. 585-588 |
Publication status | Publié |
Affiliation | UCL - FSA/ELEC - Département d'électricité |
Links |
Bibliographic reference | Rengel, R. ; Mateos, José ; Pardo, D. ; Gonzalez, T. ; Martin, M.J. ; et. al. Microscopic analysis of high-frequency noise behaviour of Fully-Depleted Silicon-on-Insulator MOSFETs.17th International Conference on Noise and Fluctuations – ICNF 2003 (Prague, Czech Republic, du 18/08/2003 au 22/08/2003). In: Proceedings of the 17th International Conference on Noise and Fluctuations, ICNF 2003, 2003, p.pp. 585-588 |
---|---|
Permanent URL | http://hdl.handle.net/2078.1/122729 |