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Pretreatment effects on void formation for low temperature Si-Si bonded wafers
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| Document type | Communication à un colloque (Conference Paper) – Présentation orale avec comité de sélection |
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| Publication date | 2003 |
| Language | Anglais |
| Conference | "Seventh Int. Symp. on Semiconductor Wafer Bonding; science, technology and applications, 203rd Meeting of the Electrochemical Society", Paris, France (du 27/04/2003 au 02/05/2003) |
| Peer reviewed | yes |
| Host document | "Proceedings of the Seventh Int. Symp. on Semiconductor Wafer Bonding; science, technology and applications, 203rd Meeting of the Electrochemical Society"- pp. 233-238 |
| Publication status | Publié |
| Affiliation | UCL - FSA/ELEC - Département d'électricité |
| Links |
| Bibliographic reference | Zhang, Xiaodong ; Raskin, Jean-Pierre. Pretreatment effects on void formation for low temperature Si-Si bonded wafers.Seventh Int. Symp. on Semiconductor Wafer Bonding; science, technology and applications, 203rd Meeting of the Electrochemical Society (Paris, France, du 27/04/2003 au 02/05/2003). In: Proceedings of the Seventh Int. Symp. on Semiconductor Wafer Bonding; science, technology and applications, 203rd Meeting of the Electrochemical Society, 2003, p.pp. 233-238 |
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| Permanent URL | http://hdl.handle.net/2078.1/122625 |