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Direct extraction techniques of technological parameters and microwave small-signal model for sub-quarter micron SOI MOSFET’s

Bibliographic reference Goffioul, Michael ; Vanhoenacker-Janvier, Danielle ; Raskin, Jean-Pierre. Direct extraction techniques of technological parameters and microwave small-signal model for sub-quarter micron SOI MOSFET’s.5th Symposium Diagnostics and Yield, SOI – materials, devices and characterization (Warsaw, Poland, du 28/06/2000 au 30/06/2000). In: Proceedings of the 5th Symposium Diagnostics and Yield, SOI – materials, devices and characterization, 2000, p. 8 pages
Permanent URL http://hdl.handle.net/2078.1/122449