Ellis, T.
[Michigan University, Ann Arbor, MI, USA]
Raskin, Jean-Pierre
[UCL]
Katehi, L.P.
[Michigan University, Ann Arbor, MI, USA]
Rebeiz, G.M.
[Michigan University, Ann Arbor, MI, USA]
A broadband single layer vertical transition from CPW to microstrip has been developed for multilayer millimeter-wave circuits. The transition has exceptionally wide bandwidth and presents low insertion and return losses. A transition has been fabricated on a 100 μm silicon wafer that shows approximately 0.3 dB of insertion loss and better than 10 dB return loss over 75-110 GHz. This transition can be used for the vertical integration of multi-layer millimeter wave circuits and packaging.
| Bibliographic reference |
Ellis, T. ; Raskin, Jean-Pierre ; Katehi, L.P. ; Rebeiz, G.M.. A Wideband CPW-to-microstrip Transition for Millimeter-wave Packaging.IEEE MTT-S International Microwave Symposium (Anaheim, CA, USA, du 13/06/1999 au 19/06/1999). In: Proceedings of the IEEE MTT-S International Microwave Symposium, 1999, p.pp. 629-632 |
| Permanent URL |
http://hdl.handle.net/2078.1/122316 |
