Raskin, Jean-Pierre
[UCL]
Gillon, Renaud
[UCL]
Vanhoenacker-Janvier, Danielle
[UCL]
Colinge, Jean-Pierre
[UCL]
An extraction method for small-signal model parameters of Silicon-on-Insulator (SOI) MOS transistors is presented. This technique allows to obtain the intrinsic and extrinsic parameter values for a high frequency small-signal model directly from scattering parameter measurements. Only two sets of measured S-parameters are required, one set in the zero-bias condition at relatively high frequency to obtain values of series parasitic elements (RG, RD and R S) and the other in the frequency band and the bias conditions of interest to determine the parallel elements of the equivalent circuit.
Bibliographic reference |
Raskin, Jean-Pierre ; Gillon, Renaud ; Vanhoenacker-Janvier, Danielle ; Colinge, Jean-Pierre. Direct extraction method of SOI MOSFET transistor's parameters.International Conference on Microelectronic Test Structures, ICMTS 1996. (Trento, Italy, du 26/03/1996 au 28/03/1996). In: Proceedings of the International Conference on Microelectronic Test Structures, ICMTS 1996, 1996, p. 191-194 |
Permanent URL |
http://hdl.handle.net/2078.1/122228 |