User menu

Hot carrier (HC) and Bias-Temperature-Instability (BTI) degradation of MuGFETs on silicon oxide and silicon nitride buried layers

Bibliographic reference Lee, Chi-Woo ; Ferain, Isabelle ; Afzalian, Aryan ; Byun, K.-Y. ; Yan, Ran ; et. al. Hot carrier (HC) and Bias-Temperature-Instability (BTI) degradation of MuGFETs on silicon oxide and silicon nitride buried layers.ESSDERC 2009 (du Date de début au Date de fin). In: Proceedings of ESSDERC 2009, 2009
Permanent URL http://hdl.handle.net/2078.1/122169