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High frequency four noise parameters of Silicon-on-Insulator-based technology MOSFET: Prospects for application to low noise RF integrated circuits

Bibliographic reference Dambrine, Gilles ; Raskin, Jean-Pierre ; Picheta, L. ; Vanhoenacker-Janvier, Danielle ; Colinge, Jean-Pierre ; et. al. High frequency four noise parameters of Silicon-on-Insulator-based technology MOSFET: Prospects for application to low noise RF integrated circuits. In: Electron Technology - Internet Journal, Vol. 32, no.1/2, p. 81-87 (1999)
Permanent URL http://hdl.handle.net/2078.1/122100