User menu

Piezoresistance of nano-scale silicon up to 2GPa in tension

Bibliographic reference Bhaskar, Umesh Kumar ; Pardoen, Thomas ; Passi, Vikram ; Raskin, Jean-Pierre. Piezoresistance of nano-scale silicon up to 2GPa in tension. In: Applied Physics Letters, Vol. 102, no.3, p. 031911 (2013)
Permanent URL http://hdl.handle.net/2078.1/121927
  1. Smith Charles S., Piezoresistance Effect in Germanium and Silicon, 10.1103/physrev.94.42
  2. Herring Conyers, Vogt Erich, Transport and Deformation-Potential Theory for Many-Valley Semiconductors with Anisotropic Scattering, 10.1103/physrev.101.944
  3. Bardeen J., Shockley W., Deformation Potentials and Mobilities in Non-Polar Crystals, 10.1103/physrev.80.72
  4. Fischetti M. V., Ren Z., Solomon P. M., Yang M., Rim K., Six-band k⋅p calculation of the hole mobility in silicon inversion layers: Dependence on surface orientation, strain, and silicon thickness, 10.1063/1.1585120
  5. Sun Y., Thompson S. E., Nishida T., Physics of strain effects in semiconductors and metal-oxide-semiconductor field-effect transistors, 10.1063/1.2730561
  6. Chu Min, Sun Yongke, Aghoram Umamaheswari, Thompson Scott E., Strain: A Solution for Higher Carrier Mobility in Nanoscale MOSFETs, 10.1146/annurev-matsci-082908-145312
  7. Kanda Y., A graphical representation of the piezoresistance coefficients in silicon, 10.1109/t-ed.1982.20659
  8. Tufte O. N., Stelzer E. L., Piezoresistive Properties of Silicon Diffused Layers, 10.1063/1.1702605
  9. Matsuda Kazunori, Suzuki Katuhisa, Yamamura Kazuhisa, Kanda Yozo, Nonlinear piezoresistance effects in silicon, 10.1063/1.353169
  10. Aubrey J. E., Gubler W., Henningsen T., Koenig S. H., Piezoresistance and Piezo-Hall-Effect inn-Type Silicon, 10.1103/physrev.130.1667
  11. Barlian A.A., Park W.-T., Mallon J.R., Rastegar A.J., Pruitt B.L., Review: Semiconductor Piezoresistance for Microsystems, 10.1109/jproc.2009.2013612
  12. Thompson S.E., Guangyu Sun, Youn Sung Choi, Nishida T., Uniaxial-process-induced strained-Si: extending the CMOS roadmap, 10.1109/ted.2006.872088
  13. Antoniadis D. A., Aberg I., Ni Chleirigh C., Nayfeh O. M., Khakifirooz A., Hoyt J. L., Continuous MOSFET performance increase with device scaling: The role of strain and channel material innovations, 10.1147/rd.504.0363
  14. Suthram S., Ziegert J. C., Nishida T., Thompson S. E., Piezoresistance Coefficients of (100) Silicon nMOSFETs Measured at Low and High (<formula formulatype="inline"><tex>$\sim$</tex></formula>1.5 GPa) Channel Stress, 10.1109/led.2006.887939
  15. Chu Min, Nishida Toshikazu, Lv Xiaoliang, Mohta Nidhi, Thompson Scott E., Comparison between high-field piezoresistance coefficients of Si metal-oxide-semiconductor field-effect transistors and bulk Si under uniaxial and biaxial stress, 10.1063/1.2936890
  16. Milne J. S., Favorskiy I., Rowe A. C. H., Arscott S., Renner Ch., Piezoresistance in Silicon at Uniaxial Compressive Stresses up to 3 GPa, 10.1103/physrevlett.108.256801
  17. Colinge Jean-Pierre, Lee Chi-Woo, Afzalian Aryan, Akhavan Nima Dehdashti, Yan Ran, Ferain Isabelle, Razavi Pedram, O'Neill Brendan, Blake Alan, White Mary, Kelleher Anne-Marie, McCarthy Brendan, Murphy Richard, Nanowire transistors without junctions, 10.1038/nnano.2010.15
  18. Niquet Yann-Michel, Delerue Christophe, Krzeminski Christophe, Effects of Strain on the Carrier Mobility in Silicon Nanowires, 10.1021/nl3010995
  19. Raskin Jean-Pierre, Colinge Jean-Pierre, Ferain Isabelle, Kranti Abhinav, Lee Chi-Woo, Akhavan Nima Dehdashti, Yan Ran, Razavi Pedram, Yu Ran, Mobility improvement in nanowire junctionless transistors by uniaxial strain, 10.1063/1.3474608
  20. Jacobsen Rune S., Andersen Karin N., Borel Peter I., Fage-Pedersen Jacob, Frandsen Lars H., Hansen Ole, Kristensen Martin, Lavrinenko Andrei V., Moulin Gaid, Ou Haiyan, Peucheret Christophe, Zsigri Beáta, Bjarklev Anders, Strained silicon as a new electro-optic material, 10.1038/nature04706
  21. Wu Zhigang, Neaton J. B., Grossman Jeffrey C., Charge Separation via Strain in Silicon Nanowires, 10.1021/nl9010854
  22. Shiri Daryoush, Kong Yifan, Buin Andrei, Anantram M. P., Strain induced change of bandgap and effective mass in silicon nanowires, 10.1063/1.2973208
  23. He Rongrui, Yang Peidong, Giant piezoresistance effect in silicon nanowires, 10.1038/nnano.2006.53
  24. Rowe Alistair C. H., Silicon nanowires feel the pinch, 10.1038/nnano.2008.108
  25. Neuzil Pavel, Wong Chee Chung, Reboud Julien, Electrically Controlled Giant Piezoresistance in Silicon Nanowires, 10.1021/nl9037856
  26. Milne J. S., Rowe A. C. H., Arscott S., Renner Ch., Giant Piezoresistance Effects in Silicon Nanowires and Microwires, 10.1103/physrevlett.105.226802
  27. Koumela A, Mercier D, Dupré C, Jourdan G, Marcoux C, Ollier E, Purcell S T, Duraffourg L, Piezoresistance of top-down suspended Si nanowires, 10.1088/0957-4484/22/39/395701
  28. Lugstein A., Steinmair M., Steiger A., Kosina H., Bertagnolli E., Anomalous Piezoresistance Effect in Ultrastrained Silicon Nanowires, 10.1021/nl102179c
  29. Bhaskar Umesh, Passi Vikram, Houri Samer, Escobedo-Cousin Enrique, Olsen Sarah H., Pardoen Thomas, Raskin Jean-Pierre, On-chip tensile testing of nanoscale silicon free-standing beams, 10.1557/jmr.2011.340
  30. Passi Vikram, Bhaskar Umesh, Pardoen Thomas, Sodervall Ulf, Nilsson Bengt, Petersson Göran, Hagberg Mats, Raskin Jean-Pierre, High-Throughput On-Chip Large Deformation of Silicon Nanoribbons and Nanowires, 10.1109/jmems.2012.2190711
  31. Gravier S., Coulombier M., Safi A., Andre N., Boe A., Raskin J.-P., Pardoen T., New On-Chip Nanomechanical Testing Laboratory - Applications to Aluminum and Polysilicon Thin Films, 10.1109/jmems.2009.2020380
  32. Bardeen John, Surface States and Rectification at a Metal Semi-Conductor Contact, 10.1103/physrev.71.717