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Strain in silicon nanowire beams

Bibliographic reference Urena, F. ; Olsen, S.H. ; Šiller, L. ; Bhaskar, Umesh Kumar ; Pardoen, Thomas ; et. al. Strain in silicon nanowire beams. In: Journal of Applied Physics, Vol. 112, no. 11, p. 114506 (2012)
Permanent URL http://hdl.handle.net/2078.1/121114
  1. Cui Y., Nanowire Nanosensors for Highly Sensitive and Selective Detection of Biological and Chemical Species, 10.1126/science.1062711
  2. Passi Vikram, Ravaux Florent, Dubois Emmanuel, Clavaguera Simon, Carella Alexandre, Celle Caroline, Simonato Jean-Pierre, Silvestri Luca, Reggiani Susanna, Vuillaume Dominique, Raskin Jean-Pierre, High Gain and Fast Detection of Warfare Agents Using Back-Gated Silicon-Nanowired MOSFETs, 10.1109/led.2011.2146750
  3. Zhou X.T., Hu J.Q., Li C.P., Ma D.D.D., Lee C.S., Lee S.T., Silicon nanowires as chemical sensors, 10.1016/s0009-2614(02)02008-0
  4. Singh N., Agarwal A., Bera L.K., Liow T.Y., Yang R., Rustagi S.C., Tung C.H., Kumar R., Lo G.Q., Balasubramanian N., Kwong D.-L., High-performance fully depleted silicon nanowire (diameter /spl les/ 5 nm) gate-all-around CMOS devices, 10.1109/led.2006.873381
  5. Wang Runsheng, Liu Hongwei, Huang Ru, Zhuge Jing, Zhang Liangliang, Kim Dong-Won, Zhang Xing, Park Donggun, Wang Yangyuan, Experimental Investigations on Carrier Transport in Si Nanowire Transistors: Ballistic Efficiency and Apparent Mobility, 10.1109/ted.2008.2005152
  6. Barlian A.A., Park W.-T., Mallon J.R., Rastegar A.J., Pruitt B.L., Review: Semiconductor Piezoresistance for Microsystems, 10.1109/jproc.2009.2013612
  7. Chu Min, Sun Yongke, Aghoram Umamaheswari, Thompson Scott E., Strain: A Solution for Higher Carrier Mobility in Nanoscale MOSFETs, 10.1146/annurev-matsci-082908-145312
  8. Langdo T.A, Currie M.T, Cheng Z.-Y, Fiorenza J.G, Erdtmann M, Braithwaite G, Leitz C.W, Vineis C.J, Carlin J.A, Lochtefeld A, Bulsara M.T, Lauer I, Antoniadis D.A, Somerville M, Strained Si on insulator technology: from materials to devices, 10.1016/j.sse.2004.02.013
  9. Thompson S.E., Guangyu Sun, Youn Sung Choi, Nishida T., Uniaxial-process-induced strained-Si: extending the CMOS roadmap, 10.1109/ted.2006.872088
  10. Degraeve R., Groeseneken G., De Wolf I., Maes H.E., The effect of externally imposed mechanical stress on the hot-carrier-induced degradation of deep-sub micron nMOSFET's, 10.1109/16.585549
  11. Hu S. M., Stress‐related problems in silicon technology, 10.1063/1.349282
  12. Hull R., Properties of Crystalline Silicon
  13. Han X. D., Zheng K., Zhang Y. F., Zhang X. N., Zhang Z., Wang Z. L., Low-Temperature In Situ Large-Strain Plasticity of Silicon Nanowires, 10.1002/adma.200602705
  14. Li Xinxin, Ono Takahito, Wang Yuelin, Esashi Masayoshi, Ultrathin single-crystalline-silicon cantilever resonators: Fabrication technology and significant specimen size effect on Young’s modulus, 10.1063/1.1618369
  15. Sadeghian Hamed, Goosen Hans, Bossche Andre, Thijsse Barend, van Keulen Fred, On the size-dependent elasticity of silicon nanocantilevers: impact of defects, 10.1088/0022-3727/44/7/072001
  16. Freund L. B., Thin Film Materials: Stress, Defect Formation, and Surface Evolution (2003)
  17. Ibach Harald, The role of surface stress in reconstruction, epitaxial growth and stabilization of mesoscopic structures, 10.1016/s0167-5729(97)00010-1
  18. Ponomareva Inna, Srivastava Deepak, Menon Madhu, Thermal Conductivity in Thin Silicon Nanowires:  Phonon Confinement Effect, 10.1021/nl062823d
  19. Sadeghian Hamed, Goosen Johannes F.L., Bossche Andre, Thijsse Barend J., van Keulen Fred, Surface reconstruction and elastic behavior of silicon nanobeams: The impact of applied deformation, 10.1016/j.tsf.2010.01.013
  20. Gordon Michael J., Baron Thierry, Dhalluin Florian, Gentile Pascal, Ferret Pierre, Size Effects in Mechanical Deformation and Fracture of Cantilevered Silicon Nanowires, 10.1021/nl802556d
  21. Jing G. Y., Duan H. L., Sun X. M., Zhang Z. S., Xu J., Li Y. D., Wang J. X., Yu D. P., Surface effects on elastic properties of silver nanowires: Contact atomic-force microscopy, 10.1103/physrevb.73.235409
  22. Sundararajan Sriram, Bhushan Bharat, Development of AFM-based techniques to measure mechanical properties of nanoscale structures, 10.1016/s0924-4247(02)00268-6
  23. Srikar V.T., Swan A.K., Unlu M.S., Goldberg B.B., Spearing S.M., Micro-Raman measurement of bending stresses in micromachined silicon flexures, 10.1109/jmems.2003.820280
  24. Walavalkar Sameer S., Homyk Andrew P., Henry M. David, Scherer Axel, Controllable deformation of silicon nanowires with strain up to 24%, 10.1063/1.3436589
  25. Hsin Cheng-Lun, Mai Wenjie, Gu Yudong, Gao Yifan, Huang Chi-Te, Liu Yuzi, Chen Lih-Juann, Wang Zhong-Lin, Elastic Properties and Buckling of Silicon Nanowires, 10.1002/adma.200800485
  26. Espinosa H.D., Yong Zhu, Moldovan N., Design and Operation of a MEMS-Based Material Testing System for Nanomechanical Characterization, 10.1109/jmems.2007.905739
  27. Haque M. A., Saif M. T. A., In-situ tensile testing of nano-scale specimens in SEM and TEM, 10.1007/bf02411059
  28. Lu Shaoning, Guo Zaoyang, Ding Weiqiang, Ruoff Rodney S., Analysis of a microelectromechanical system testing stage for tensile loading of nanostructures, 10.1063/1.2198789
  29. Kang Wonmo, Han Jong H., Saif M. Taher A., A Novel Method for In Situ Uniaxial Tests at the Micro/Nanoscale—Part II: Experiment, 10.1109/jmems.2010.2076782
  30. Steighner M. S., Snedeker L. P., Boyce B. L., Gall K., Miller D. C., Muhlstein C. L., Dependence on diameter and growth direction of apparent strain to failure of Si nanowires, 10.1063/1.3537658
  31. Zhang Yong, Liu Xinyu, Ru Changhai, Zhang Yan Liang, Dong Lixin, Sun Yu, Piezoresistivity Characterization of Synthetic Silicon Nanowires Using a MEMS Device, 10.1109/jmems.2011.2153825
  32. NAMAZU T., INOUE S., Characterization of single crystal silicon and electroplated nickel films by uniaxial tensile test with in situ X-ray diffraction measurement, 10.1111/j.1460-2695.2006.01043.x
  33. Armigliato A, Balboni R, Balboni S, Frabboni S, Tixier A, Carnevale G.P, Colpani P, Pavia G, Marmiroli A, TEM/CBED determination of strain in silicon-based submicrometric electronic devices, 10.1016/s0968-4328(99)00084-0
  34. Toda Akio, Ikarashi Nobuyuki, Ono Haruhiko, Local lattice strain measurements in semiconductor devices by using convergent-beam electron diffraction, 10.1016/s0022-0248(99)00707-1
  35. Zhang Peng, Istratov Andrei A., Weber Eicke R., Kisielowski Christian, He Haifeng, Nelson Chris, Spence John C. H., Direct strain measurement in a 65nm node strained silicon transistor by convergent-beam electron diffraction, 10.1063/1.2362978
  36. Wolf Ingrid De, Micro-Raman spectroscopy to study local mechanical stress in silicon integrated circuits, 10.1088/0268-1242/11/2/001
  37. Gravier S., Coulombier M., Safi A., Andre N., Boe A., Raskin J.-P., Pardoen T., New On-Chip Nanomechanical Testing Laboratory - Applications to Aluminum and Polysilicon Thin Films, 10.1109/jmems.2009.2020380
  38. Idrissi Hosni, Wang Binjie, Colla Marie Stéphane, Raskin Jean Pierre, Schryvers Dominique, Pardoen Thomas, Ultrahigh Strain Hardening in Thin Palladium Films with Nanoscale Twins, 10.1002/adma.201004160
  39. Colla M.-S., Wang B., Idrissi H., Schryvers D., Raskin J.-P., Pardoen T., High strength-ductility of thin nanocrystalline palladium films with nanoscale twins: On-chip testing and grain aggregate model, 10.1016/j.actamat.2011.11.054
  40. Nye J. F., Physical Properties of Crystals: Their Representation by Tensors and Matrices (1985)
  41. Hopcroft Matthew A., Nix William D., Kenny Thomas W., What is the Young's Modulus of Silicon?, 10.1109/jmems.2009.2039697
  42. Dombrowski K. F., De Wolf I., Dietrich B., Stress measurements using ultraviolet micro-Raman spectroscopy, 10.1063/1.125044
  43. Passi Vikram, Sodervall Ulf, Nilsson Bengt, Petersson Goran, Hagberg Mats, Krzeminski Christophe, Dubois Emmanuel, Bois Bert Du, Raskin Jean-Pierre, Anisotropic vapor HF etching of silicon dioxide for Si microstructure release, 10.1016/j.mee.2012.01.005
  44. Boé A., Safi A., Coulombier M., Pardoen T., Raskin J.-P., Internal stress relaxation based method for elastic stiffness characterization of very thin films, 10.1016/j.tsf.2009.06.062
  45. Wolf Ingrid De, Stress measurements in Si microelectronics devices using Raman spectroscopy, 10.1002/(sici)1097-4555(199910)30:10<877::aid-jrs464>3.0.co;2-5
  46. Georgi Carsten, Hecker Michael, Zschech Ehrenfried, Effects of laser-induced heating on Raman stress measurements of silicon and silicon-germanium structures, 10.1063/1.2743882
  47. Anastassakis E., Pinczuk A., Burstein E., Pollak F.H., Cardona M., Effect of static uniaxial stress on the Raman spectrum of silicon, 10.1016/0038-1098(70)90588-0
  48. Kozhushko V. V., Lomonosov A. M., Hess P., Intrinsic Strength of Silicon Crystals in Pure- and Combined-Mode Fracture without Precrack, 10.1103/physrevlett.98.195505
  49. Ando Taeko, Shikida Mitsuhiro, Sato Kazuo, Tensile-mode fatigue testing of silicon films as structural materials for MEMS, 10.1016/s0924-4247(01)00623-9
  50. Roundy David, Cohen Marvin L., Ideal strength of diamond, Si, and Ge, 10.1103/physrevb.64.212103
  51. Umeno Yoshitaka, Kushima Akihiro, Kitamura Takayuki, Gumbsch Peter, Li Ju, Ab initiostudy of the surface properties and ideal strength of (100) silicon thin films, 10.1103/physrevb.72.165431
  52. Tuma Christian, Curioni Alessandro, Large scale computer simulations of strain distribution and electron effective masses in silicon ⟨100⟩ nanowires, 10.1063/1.3428660
  53. Shiri Daryoush, Kong Yifan, Buin Andrei, Anantram M. P., Strain induced change of bandgap and effective mass in silicon nanowires, 10.1063/1.2973208
  54. Zhu Yong, Xu Feng, Qin Qingquan, Fung Wayne Y., Lu Wei, Mechanical Properties of Vapor−Liquid−Solid Synthesized Silicon Nanowires, 10.1021/nl902132w
  55. Bhaskar Umesh, Passi Vikram, Houri Samer, Escobedo-Cousin Enrique, Olsen Sarah H., Pardoen Thomas, Raskin Jean-Pierre, On-chip tensile testing of nanoscale silicon free-standing beams, 10.1557/jmr.2011.340
  56. Q. H. Jin, T. Li, Y. L. Wang, X. L. Gao, and F. F. Xu, in Proceedings of the 2010 IEEE Sensors, pp. 2530–2533.
  57. Sadeghian H., Yang C. K., Goosen J. F. L., van der Drift E., Bossche A., French P. J., van Keulen F., Characterizing size-dependent effective elastic modulus of silicon nanocantilevers using electrostatic pull-in instability, 10.1063/1.3148774
  58. Sohn Young-Soo, Park Jinsung, Yoon Gwonchan, Song Jiseok, Jee Sang-Won, Lee Jung-Ho, Na Sungsoo, Kwon Taeyun, Eom Kilho, Mechanical Properties of Silicon Nanowires, 10.1007/s11671-009-9467-7
  59. Heidelberg Andreas, Ngo Lien T., Wu Bin, Phillips Mick A., Sharma Shashank, Kamins Theodore I., Sader John E., Boland John J., A Generalized Description of the Elastic Properties of Nanowires, 10.1021/nl060028u
  60. Lee Byeongchan, Rudd Robert E., First-principles calculation of mechanical properties of Si⟨001⟩ nanowires and comparison to nanomechanical theory, 10.1103/physrevb.75.195328
  61. Leu Paul W., Svizhenko Alexei, Cho Kyeongjae, Ab initiocalculations of the mechanical and electronic properties of strained Si nanowires, 10.1103/physrevb.77.235305
  62. Sadeghian H., Yang C. K., Gavan K. Babaei, Goosen J. F. L., van der Drift E. W. J. M., van der Zant H. S. J., French P. J., Bossche A., van Keulen F., Effects of Surface Stress on Nanocantilevers, 10.1380/ejssnt.2009.161
  63. Surface elasticity effect on the size-dependent elastic property of nanowires, 10.1063/1.3703671
  64. Sadeghian Hamed, Yang Chung-Kai, Goosen Johannes F L, Bossche Andre, Staufer Urs, French Paddy J, van Keulen Fred, Effects of size and defects on the elasticity of silicon nanocantilevers, 10.1088/0960-1317/20/6/064012
  65. Röhlig Claus-Christian, Niebelschütz Merten, Brueckner Klemens, Tonisch Katja, Ambacher Oliver, Cimalla Volker, Elastic properties of nanowires, 10.1002/pssb.201046378
  66. Wang Jing, Huang Qing-An, Yu Hong, Effect of native oxides on the elasticity of a silicon nano-scale beam, 10.1016/j.ssc.2007.12.002
  67. Tang Dai-Ming, Ren Cui-Lan, Wang Ming-Sheng, Wei Xianlong, Kawamoto Naoyuki, Liu Chang, Bando Yoshio, Mitome Masanori, Fukata Naoki, Golberg Dmitri, Mechanical Properties of Si Nanowires as Revealed by in Situ Transmission Electron Microscopy and Molecular Dynamics Simulations, 10.1021/nl204282y
  68. Wu H A, Liu G R, Wang J S, Atomistic and continuum simulation on extension behaviour of single crystal with nano-holes, 10.1088/0965-0393/12/2/004
  69. Lomonosov A. M., Hess P., Impulsive Fracture of Silicon by Elastic Surface Pulses with Shocks, 10.1103/physrevlett.89.095501
  70. Zhou S. J., Lomdahl P. S., Thomson R., Holian B. L., Dynamic Crack Processes via Molecular Dynamics, 10.1103/physrevlett.76.2318
  71. Lehmann G., Lomonosov A. M., Hess P., Gumbsch P., Impulsive fracture of fused quartz and silicon crystals by nonlinear surface acoustic waves, 10.1063/1.1594275
  72. Reedy E. David, Boyce Brad L., Foulk James W., Field Richard V., de Boer Maarten P., Hazra Siddharth S., Predicting Fracture in Micrometer-Scale Polycrystalline Silicon MEMS Structures, 10.1109/jmems.2011.2153824
  73. Tsuchiya T., Tabata O., Sakata J., Taga Y., Specimen size effect on tensile strength of surface-micromachined polycrystalline silicon thin films, 10.1109/84.661392
  74. Boyce Brad L., Grazier J. Mark, Buchheit Thomas E., Shaw Michael J., Strength Distributions in Polycrystalline Silicon MEMS, 10.1109/jmems.2007.892794
  75. Borrero-López Oscar, Hoffman Mark, Bendavid Avi, Martin Phil J., Reverse size effect in the fracture strength of brittle thin films, 10.1016/j.scriptamat.2009.01.042
  76. Sharpe W.N., Jadaan O., Beheim G.M., Quinn G.D., Nemeth N.N., Fracture strength of silicon carbide microspecimens, 10.1109/jmems.2005.851862
  77. Zang Ji, Liu Feng, Theory of bending of Si nanocantilevers induced by molecular adsorption: a modified Stoney formula for the calibration of nanomechanochemical sensors, 10.1088/0957-4484/18/40/405501
  78. Cammarata R C, Sieradzki K, Surface and Interface Stresses, 10.1146/annurev.ms.24.080194.001243
  79. Ni Hai, Li Xiaodong, Gao Hongsheng, Elastic modulus of amorphous SiO2 nanowires, 10.1063/1.2165275
  80. Ross R G, Andersson P, Sundqvist B, Backstrom G, Thermal conductivity of solids and liquids under pressure, 10.1088/0034-4885/47/10/002
  81. Rosenblum Irina, Adler Joan, Brandon Simon, Hoffman Alon, Molecular-dynamics simulation of thermal stress at the (100) diamond/substrate interface: Effect of film continuity, 10.1103/physrevb.62.2920
  82. Li Xiaobo, Maute Kurt, Dunn Martin L., Yang Ronggui, Strain effects on the thermal conductivity of nanostructures, 10.1103/physrevb.81.245318
  83. Gan Ming, Tomar Vikas, Correlating Microscale Thermal Conductivity of Heavily-Doped Silicon With Simultaneous Measurements of Stress, 10.1115/1.4004699
  84. Liangruksa Monrudee, Puri Ishwar K., Lattice thermal conductivity of a silicon nanowire under surface stress, 10.1063/1.3583668
  85. Gibbons T. M., Kang By., Estreicher S. K., Carbogno C., Thermal conductivity of Si nanostructures containing defects: Methodology, isotope effects, and phonon trapping, 10.1103/physrevb.84.035317
  86. J. Anaya, A. Torres, A. Martin-Martin, O. Martinez, A. C. Prieto, J. Jimenez, A. Rodriguez, J. Sangrador, and T. Rodriguez, in Vi Encuentro Franco-Espanol De Quimica Y Fisica Del Estado Solido - Vi Rencontre Franco-Espagnole Sur La Chimie Et La Physique De L Etat Solide, edited by J. J. A. M. D. F. Carvajal (2010), Vol. 8, pp. 78–83.