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Ultra-scaled Z-RAM cell

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Okhonin, S. [Innovative Silicon, PSE-B, Lausanne] Nagoga, M. [Innovative Silicon, PSE-B, Lausanne] Lee, Chi-Woo [Tyndall National Institute, University of cork] Colinge, Jean-Pierre [Tyndall National Institute, University of cork] Afzalian, Aryan [UCL] Mazure, C. [SOITEC S.A., Bernin/france]

Ultra-scaled Z-RAM cells based on MuGFETs are demonstrated for the first time. Effects of physical parameters such as channel doping concentration, fin width, and gate length on Z-RAM cell performance are discussed. Transient measurements and simulations prove that the basic operational principles are effective on Z-RAM cells with a gate length down to 12.5 nm.

Document type Communication à un colloque (Conference Paper) – Présentation orale avec comité de sélection
Access type Accès restreint
Publication date 2008
Language Anglais
Conference "2008 IEEE International SOI Conference", New paltz, NY (USA) (du 06/10/2008 au 08/10/2008)
Peer reviewed yes
Host document "Proceedings of the 2008 IEEE International SOI Conference"- p. 157-158 (ISBN : 978-1-4244-1954-8)
Publisher IEEE
Publication status Publié
Affiliation UCL - FSA/ELEC - Département d'électricité
Keywords Z-RAM cell ; MugFETs
Links
Bibliographic reference Okhonin, S. ; Nagoga, M. ; Lee, Chi-Woo ; Colinge, Jean-Pierre ; Afzalian, Aryan ; et. al. Ultra-scaled Z-RAM cell.2008 IEEE International SOI Conference (New paltz, NY (USA), du 06/10/2008 au 08/10/2008). In: Proceedings of the 2008 IEEE International SOI Conference, IEEE2008, p. 157-158
Permanent URL http://hdl.handle.net/2078.1/120965