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Direct growth of graphitic carbon on Si(111)

Bibliographic reference Pham Thanh Trung ; Joucken, Frédéric ; Campos Delgado, Jessica ; Raskin, Jean-Pierre ; Hackens, Benoît ; et. al. Direct growth of graphitic carbon on Si(111). In: Applied Physics Letters, Vol. 102, p. 013118 1-5 (2013)
Permanent URL http://hdl.handle.net/2078/120913
  1. Novoselov K. S., Electric Field Effect in Atomically Thin Carbon Films, 10.1126/science.1102896
  2. Wintterlin J., Bocquet M.-L., Graphene on metal surfaces, 10.1016/j.susc.2008.08.037
  3. Hass J, de Heer W A, Conrad E H, The growth and morphology of epitaxial multilayer graphene, 10.1088/0953-8984/20/32/323202
  4. Tang J., Kang C.Y., Li L.M., Yan W.S., Wei S.Q., Xu P.S., Graphene films grown on Si substrate via direct deposition of solid-state carbon atoms, 10.1016/j.physe.2011.03.014
  5. Hackley J., Ali D., DiPasquale J., Demaree J. D., Richardson C. J. K., Graphitic carbon growth on Si(111) using solid source molecular beam epitaxy, 10.1063/1.3242029
  6. Ochedowski O, Begall G, Scheuschner N, El Kharrazi M, Maultzsch J, Schleberger M, Graphene on Si(111)7×7, 10.1088/0957-4484/23/40/405708
  7. Ritter Kyle A, Lyding Joseph W, Characterization of nanometer-sized, mechanically exfoliated graphene on the H-passivated Si(100) surface using scanning tunneling microscopy, 10.1088/0957-4484/19/01/015704
  8. Qian Guo-Xin, Chadi D., Si(111)-7×7 surface: Energy-minimization calculation for the dimer–adatom–stacking-fault model, 10.1103/physrevb.35.1288
  9. Hibino H., Fukuda T., Suzuki M., Homma Y., Sato T., Iwatsuki M., Miki K., Tokumoto H., High-temperature scanning-tunneling-microscopy observation of phase transitions and reconstruction on a vicinal Si(111) surface, 10.1103/physrevb.47.13027
  10. Johansson L.I, Glans P.-A, Hellgren N, A core level and valence band photoemission study of 6H-SiC, 10.1016/s0039-6028(98)00086-7
  11. Mednikarov B., J. Optoelectron. Adv. Mater., 7, 1407 (2005)
  12. Jackson S, Determining hybridization differences for amorphous carbon from the XPS C 1s envelope, 10.1016/0169-4332(95)00079-8
  13. Matsunami Hiroyuki, Kimoto Tsunenobu, Step-controlled epitaxial growth of SiC: High quality homoepitaxy, 10.1016/s0927-796x(97)00005-3
  14. Suemitsu M, Fukidome H, Epitaxial graphene on silicon substrates, 10.1088/0022-3727/43/37/374012
  15. Ouerghi A., Kahouli A., Lucot D., Portail M., Travers L., Gierak J., Penuelas J., Jegou P., Shukla A., Chassagne T., Zielinski M., Epitaxial graphene on cubic SiC(111)/Si(111) substrate, 10.1063/1.3427406
  16. Inoue Y., Nakashima S., Mitsuishi A., Tabata S., Tsuboi S., Raman spectra of amorphous SiC, 10.1016/0038-1098(83)90834-7
  17. Calcagno L, Musumeci P, Roccaforte F, Bongiorno C, Foti G, Crystallization process of amorphous silicon–carbon alloys, 10.1016/s0040-6090(02)00332-2
  18. Lespade Pierre, Marchand André, Couzi Michel, Cruege Francis, Caracterisation de materiaux carbones par microspectrometrie Raman, 10.1016/0008-6223(84)90009-5
  19. Ferrari A. C., Robertson J., Interpretation of Raman spectra of disordered and amorphous carbon, 10.1103/physrevb.61.14095
  20. Latil Sylvain, Meunier Vincent, Henrard Luc, Massless fermions in multilayer graphitic systems with misoriented layers:Ab initiocalculations and experimental fingerprints, 10.1103/physrevb.76.201402
  21. Wang Yongfeng, Ye Yingchun, Wu Kai, Simultaneous observation of the triangular and honeycomb structures on highly oriented pyrolytic graphite at room temperature: An STM study, 10.1016/j.susc.2005.12.001