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Influence of Fluorine Implant on Threshold Voltage for Metal Gate FDSOI and MuGFET

Bibliographic reference Xiong, Weize ; Hsu, C.H. ; Cleavelin, C.R. ; Ma, M. ; Patruno, P. ; et. al. Influence of Fluorine Implant on Threshold Voltage for Metal Gate FDSOI and MuGFET.2007 IEEE International SOI Conference (Indian Wells (USA), du 01/10/2007 au 04/10/2007). In: Proceedings of the 2007 IEEE International SOI Conference, IEEE2007, p.2 pages
Permanent URL http://hdl.handle.net/2078.1/120468