This paper describes the simulation of the electrical characteristics of a new transistor concept called the ‘‘Junctionless Multigate Field-Effect Transistor (MuGFET)”. The proposed device has no junctions, a simpler fabrication process, less variability and better electrical properties than classical inversion-mode devices with PN junctions at the source and drain. The simulation results indicate that the junctionless MuGFET is a very promising candidate for future decananometer MOSFET applications.
