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New empirical model for leakage drain current of SOI MOSFETs valid from room to high temperatures

Bibliographic reference Bellodi, Marcello ; Martino, Joao Antonio ; Flandre, Denis. New empirical model for leakage drain current of SOI MOSFETs valid from room to high temperatures. In: Journal of Solid-State Devices and Circuits, p. 7-10 (1996)
Permanent URL http://hdl.handle.net/2078.1/114159