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New empirical model for leakage drain current of SOI MOSFETs valid from room to high temperatures
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Document type | Article de périodique (Journal article) – Article de recherche |
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Publication date | 1996 |
Language | Anglais |
Journal information | "Journal of Solid-State Devices and Circuits" - p. 7-10 (1996) |
Peer reviewed | yes |
Publisher | Sociedade Brasileira de Microeletronica |
issn | 0104-9631 |
Publication status | Publié |
Affiliation | UCL - FSA/ELEC - Département d'électricité |
Keywords | SOI ; MOSFET ; leakage drain current |
Links |
Bibliographic reference | Bellodi, Marcello ; Martino, Joao Antonio ; Flandre, Denis. New empirical model for leakage drain current of SOI MOSFETs valid from room to high temperatures. In: Journal of Solid-State Devices and Circuits, p. 7-10 (1996) |
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Permanent URL | http://hdl.handle.net/2078.1/114159 |