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New Memory Effect for Fully Depleted SOI MOSFETs

Bibliographic reference Bawedin, Maryline ; Cristoloveanu, Sorin ; Yun, J.G. ; Flandre, Denis. New Memory Effect for Fully Depleted SOI MOSFETs.First Workshop of the Thematic Network on Silicon on Insulator technology, devices and circuits (EUROSOI 2005) (Granada (Spain), du 19/01/2005 au 21/01/2005). In: Proceedings of the First Workshop of the Thematic Network on Silicon on Insulator technology, devices and circuits (EUROSOI 2005), 2005, p.45-46
Permanent URL http://hdl.handle.net/2078.1/114103