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A procedure to extract mobility degradation, series resistance and threshold voltage of SOI MOSFETs in the saturation region

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Ortiz-Conde, A. [Univ. Simon Bolivar, Caracas] Garcia Sanchez, F.J. [Univ. Simon Bolivar, Caracas] Cerdeira, A. [CINVESTAV] Estrada, M. [CINVESTAV] Flandre, Denis [UCL] Liou, J.J. [UCL]

Parasitic series resistance and mobility degradation are two important parameters for modeling and circuit simulation of MOSFETs. We present a new method to extract these two parameters from the current-voltage characteristics of SOI MOSFETs biased in the saturation region. This method is based on an integration function which reduces errors associated with the extraction procedure. Measured data and simulation results of SOI MOSFETs are used to test and verify the present method.

Document type Communication à un colloque (Conference Paper) – Présentation orale avec comité de sélection
Publication date 2001
Language Anglais
Conference "6th International conference on solid-state and integrated circuit technology 2001", Shanghai (China) (du 22/10/2001 au 25/10/2001)
Peer reviewed yes
Host document Bing-Zong Li, Guo-Ping Ru, Xin-Ping Qu, Paul Yu, Hiroshi Iwai ; "Proceedings of the 6th International conference on solid-state and integrated circuit technology 2001"- 887-890 (ISBN : 0-7803-6520-8)
Publisher IEEE Press
Affiliation UCL - FSA/ELEC - Département d'électricité
Keywords Circuit simulation ; Threshold voltage ; Circuit testing ; Data mining ; Degradation ; Educational institutions ; Electrical resistance measurement ; Integrated circuit measurements ; MOS devices ; MOSFETs
Links
Bibliographic reference Ortiz-Conde, A. ; Garcia Sanchez, F.J. ; Cerdeira, A. ; Estrada, M. ; Flandre, Denis ; et. al. A procedure to extract mobility degradation, series resistance and threshold voltage of SOI MOSFETs in the saturation region.6th International conference on solid-state and integrated circuit technology 2001 (Shanghai (China), du 22/10/2001 au 25/10/2001). In: Bing-Zong Li, Guo-Ping Ru, Xin-Ping Qu, Paul Yu, Hiroshi Iwai, Proceedings of the 6th International conference on solid-state and integrated circuit technology 2001, IEEE Press2001, p.887-890
Permanent URL http://hdl.handle.net/2078.1/113785