Analysis and Potential of the Bipolar- and Hybrid-Mode Thin-Film SOI MOSFETs for High-Temperature Applications

Besides the fully-depleted SOI MOSFET and its several advantages which have widely been reported in the literature in the last few years [1], thin-film SOI technology also allows for the processing of lateral bipolar transistors. These devices have already shown very good performances in current and voltage references [2,3] and could be integrated in other high-temperature precision analog circuits. In this work, we analyze, from room temperature up to 300°C, the analog performances of the SOI lateral bipolar transistor, by distinguishing two modes of operation: the pure bipolar mode and the hybrid mode. The results are compared with the standard MOSFET performances.