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Comparison of hot-carrier effects in thin-film accumulation-mode SOI and GAA p-MOSFETs

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Flandre, Denis [UCL] Francis, P. [UCL] Colinge, Jean-Pierre [UCL] Cristoloveanu, Sorin [IMEP, Grenoble]

The advantage of symmetrical gate (GAA) SOI structures over regular SOI in the case of AM p-MOSFETs was demonstrated in several respects: suppression of a latch phenomenon, suppression of excessively high hot-electron gate currents which have been experimentally and theoretically correlated with the latch, and better resistance to hot-electron degradation due to the absence of the latch and of the vulnerable buried oxide

Document type Communication à un colloque (Conference Paper) – Présentation orale avec comité de sélection
Publication date 1993
Language Anglais
Conference "IEEE International SOI Conference, 1993", Palm Springs (USA) (du 05/10/1993 au 07/10/1993)
Peer reviewed yes
Host document "Proceedings of the IEEE International SOI Conference, 1993"- 160-161 (ISBN : 0-7803-1346-1)
Publisher I E E E
Publication status Publié
Affiliations UCL - FSA/ELEC - Département d'électricité
IMEP, Grenoble
Keywords Current measurement ; Degradation ; Electric breakdown ; Hot carrier effects ; Linear predictive coding ; MOSFET circuits ; Medical simulation ; Physics ; Stress ; Thin film transistors
Links
Bibliographic reference Flandre, Denis ; Francis, P. ; Colinge, Jean-Pierre ; Cristoloveanu, Sorin. Comparison of hot-carrier effects in thin-film accumulation-mode SOI and GAA p-MOSFETs.IEEE International SOI Conference, 1993 (Palm Springs (USA), du 05/10/1993 au 07/10/1993). In: Proceedings of the IEEE International SOI Conference, 1993, I E E E1993, p.160-161
Permanent URL http://hdl.handle.net/2078.1/112205