User menu

Accès à distance ? S'identifier sur le proxy UCLouvain

A SOI CMOS smart strain sensor

Primary tabs

Rue, Bertrand [UCL] Olbrechts, Benoit [UCL] Raskin, Jean-Pierre [UCL] Flandre, Denis [UCL]

A CMOS strain sensor has been fabricated in a 1μm FD SOI CMOS process. It is based on the piezoresistive effects of PMOS transistors and integrates a frequency conversion circuit. Testing of the chip mounted on a bent hard steel blade shows fair sensitivity for 10 μW power consumption.

Document type Communication à un colloque (Conference Paper) – Présentation orale avec comité de sélection
Publication date 2011
Language Anglais
Conference "IEEE International SOI Conference (SOI 2011)", Tempe (USA) (du 03/10/2011 au 06/10/2011)
Peer reviewed yes
Host document "Proceedings of the IEEE International SOI Conference (SOI 2011)"- 1-2 (ISBN : 978-1-61284-761-0)
Publication status Publié
Affiliation UCL - SST/ICTM/ELEN - Pôle en ingénierie électrique
Keywords Blades ; CMOS integrated circuits ; Mirrors ; Silicon ; Steel ; Strain ; Stress
Links
Bibliographic reference Rue, Bertrand ; Olbrechts, Benoit ; Raskin, Jean-Pierre ; Flandre, Denis. A SOI CMOS smart strain sensor.IEEE International SOI Conference (SOI 2011) (Tempe (USA), du 03/10/2011 au 06/10/2011). In: Proceedings of the IEEE International SOI Conference (SOI 2011), 2011, p.1-2
Permanent URL http://hdl.handle.net/2078.1/106337