A novel approach for active pressure sensors in thin film SOI technology

In this paper, novel intrinsically digital pressure sensors concept is presented. Based on very thin dielectric membranes (1.5 μm), active devices and circuits are integrated directly on them. Burst pressure measurements combined with extended simulations show the relationship between membrane patterning and its mechanical weakening. Hence, as new design rules (i) the transducer area has to be minimized and (ii) being positioned at the center of the membrane. A first sensor design option is experimentally demonstrated (12% frequency variation for a pressure ranging from 0.1 to 4.8 bar); intermediate experimental results attest the performance of a second option.