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1. • Article de périodique

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   High-temperature characteristics of zone-melting recrystallized silicon-on-insulator MOSFETs

   Lysenko, V.S. Nazarov, Alexei Kilchytska, Valeriya[UCL] Rudenko, Tamara Limanov, A.B. Colinge, Jean-Pierre (1998) Semiconductor Physics, Quantum Electronics & Optoelectronics — Vol. 1, no. 1, p. 101-107 (28/10/1998)
2. • Article de périodique

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   Electrical properties of ZMR SOI structures with multilayer buried dielectrics

   Lysenko, V.S. Nazarov, Alexei Rudenko, Tamara Rudenko, A.N. Kilchytska, Valeriya[UCL] Givargizov, E.I. Limanov, A.B. (1994) Mikroelectronika — Vol. 23, no.6, p. 32-38 (1994)
3. • Chapitre

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   Characterization of Carrier Generation in Thin-Film SOI Devices By Reverse Gated-Diode Technique and Its Application At High Temperatures

   Rudenko, Tamara Kilchytska, Valeriya[UCL] Flandre, Denis[UCL] (2005) Science and Technology of Semiconductor-On-Insulator Structures and Devices Operating in a Harsh Environment Proceedings of the NATO Advanced Research Workshop on Science and Technology of Semiconductor-On-Insulator Structures and Devices Operating in a Harsh Environment Kiev, Ukraine 26–30 April 2004 — [ISBN : 1-4020-3011-8]
4. • Article de périodique

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   A Study of the Shallow Electron Traps at the 4H-SiC/SiO2 Interface

   Ólafsson, Halldór Örn Sveinbjörnsson, Einar Rudenko, Tamara Kilchytska, Valeriya[UCL] Tyagulski, I.P. Osiyuk, I.N. (2003) Materials Science Forum — Vol. 433-436, p. 547-550 (2003)
5. • Communication

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   Properties of high-temperature off-state currents in SOI MOSFETs derived from the diffusion mechanism

   Rudenko, Tamara Lysenko, V. Kilchytska, Valeriya Rudenko, A. Colinge, Jean-Pierre[UCL] (1999) Third European Conference on High Temperature Electronics (HITEN 1999) — Berlin (Germany)
6. • Communication

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   A study on the high-temperature subthreshold slope in SOI MOSFETs

   Rudenko, Tamara Lysenko, V. Kilchytska, Valeriya Rudenko, A. Colinge, Jean-Pierre[UCL] (1999) Third European Conference on High Temperature Electronics (HITEN 1999) — Berlin (Germany)
7. • Article de périodique

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   On the high-temperature subthreshold slope of thin-film SOI MOSFETs

   Rudenko, Tamara Flandre, Denis[UCL] Kilchytska, Valeriya[UCL] Colinge, Jean-Pierre[UCL] Dessard, Vincent[UCL] (2002) IEEE Electron Device Letters — Vol. 23, no. 3, p. 148-150 (March 2002)
8. • Communication

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   Specific features of the capacitance and mobility behaviors in finfet structures

   Rudenko, Tamara Kilchytska, Valeriya[UCL] Collaert, N. De Gendt, S. Rooyackers, R. Jurczak, M. Flandre, Denis[UCL] (2005) 35th European Solid-State Device Research Conference (ESSDERC 2005) — Grenoble (France)
9. • Communication

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   Experimental Study of the Effective Mobility in Doped- and Undoped-Channel Triple-Gate FinFET Structures

   Rudenko, Tamara Kilchytska, Valeriya[UCL] Collaert, N. Jurczak, Malgorzata Nazarov, Alexei Flandre, Denis[UCL] (2007) EUROSOI 2007 — Leuven (Belgium)
10. • Article de périodique

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    New Evidence of Interfacial Oxide Traps in n-Type 4H- and 6H-SiC MOS Structures

    Ólafsson, Halldor Örn Sveinbjörnsson, Einar Rudenko, Tamara Kilchytska, Valeriya[UCL] Tyagulski, I.P. Osiyuk, I.N. (2002) Materials Science Forum — Vol. 389-393, p. 1001-1004 (2002)
11. • Article de périodique

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    Determination of film and surface recombination in thin-film SOI devices using gated-diode technique

    Rudenko, Tamara Flandre, Denis[UCL] Rudenko, A Kilchytska, Valeriya Cristoloveanu, Sorin Ernst, T. Colinge, Jean-Pierre Dessard, Vincent[UCL] (2004) Solid-State Electronics — Vol. 48, no. 3, p. 389-399 (2004)
12. • Chapitre

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    A comprehensive analysis of the high-temperature off-state and subthreshold characteristics of SOI MOSFETs

    Rudenko, Tamara Lysenko, V.S. Kilchytska, Valeriya Rudenko, A.N. (2000) Perspectives, Science and Technologies for Novel Silicon on Insulator Devices — [ISBN : 978-0-7923-6117-6]
13. • Article de périodique

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    Carrier Mobility in Undoped Triple-Gate FinFET Structures and Limitations of Its Description in Terms of Top and Sidewall Channel Mobilities

    Rudenko, Tamara Kilchytska, Valeriya[UCL] Collaert, Nadine Jurczak, Malgorzata Nazarov, Alexey Flandre, Denis[UCL] (2008) IEEE Transactions on Electron Devices — Vol. 55, no. 12, p. 3532-3541 (2008)
14. • Chapitre

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    Total dose radiation response of multilayer buried insulators

    Rudenko, A.N. Nazarov, Alexei Lysenko, V.S. Kilchytska, Valeriya Rudenko, Tamara Djurenko, S.V. (2000) Perspectives, Science and Technologies for Novel Silicon on Insulator Devices — [ISBN : 978-0-7923-6117-6]
15. • Chapitre

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    Electrical characterization and special properties of FinFET structures

    Rudenko, Tamara Kilchytska, Valeriya[UCL] Collaert, N. Nazarov, A. Jurczak, Malgorzata Flandre, Denis[UCL] (2007) Nanoscaled Semiconductor-on-Insulator Structures and Devices — [ISBN : 978-1-4020-6378-7]
16. • Communication

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    Modeling and measurements of generation and recombination currents in thin-film SOI gated-diodes

    Rudenko, Tamara Kilchytska, Valeriya[UCL] (2000) NATO Advanced Research Workshop on "Perspectives, Science and Technologies for Novel Silicon on Insulator Devices" — Kiev (Ukraine)
17. • Communication

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    Characterization of Carrier Generation in Thin-Film SOI Devices by Reverse Gated-Diode Technique and Its Application at High Temperatures

    Rudenko, Tamara Kilchytska, Valeriya[UCL] Flandre, Denis[UCL] (2004) NATO Advanced Research Workshop - Science and Technology of Semiconductor-On-Insulator Structures and Devices Operating in a Harsh Environment — Kyiv (Ukraine)
18. • Chapitre

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    Modeling and measurements of generation and recombination currents in thin-film SOi gated-diodes

    Rudenko, Tamara Kilchytska, Valeriya (2002) Perspectives, Science and Technologies for Novel Silicon on Insulator Devices —
19. • Communication

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    High Temperature Characterization of Carrier Generation in SOI MOS Devices Using Gated-Diode Technique

    Rudenko, Tamara Kilchytska, Valeriya[UCL] Flandre, Denis[UCL] Dessard, Vincent[UCL] (2001) HITEN'2001 - International Conference on High Temperature Electronic — Oslo (Norway)
20. • Communication

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    Experimental evidence for reduction of gate tunneling current in FinFET structures and its dependence on the Fin width

    Rudenko, Tamara Kilchytska, Valeriya[UCL] Collaert, N. Jurczak, Malgorzata Nazarov, Alexey Flandre, Denis[UCL] (2006) 36th European Solid-State Device Research Conference (ESSDERC 2006) — Montreux (Suisse)
21. • Communication

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    Electrical properties of FinFET structures

    Rudenko, Tamara Kilchytska, Valeriya[UCL] Collaert, N. Jurczak, Malgorzata Nazarov, Alexei Flandre, Denis[UCL] (2007) III Ukrainian Conference on Semiconductor Physics — Odessa (Ukraine)
22. • Article de périodique

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    Electrical properties of FinFET structures

    Rudenko, Tamara Kilchytska, Valeriya[UCL] Collaert, N. Jurczak, M. Nazarov, A.N. Lysenko, V.S. Flandre, Denis[UCL] (2007) PHYSICAL SENSORS AND MICROSYSTEMS TECHNOLOGIES — p. 13-18 (2007)
23. • Communication

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    Electrical Characterisation and Special Properties of FinFET Structures

    Rudenko, Tamara Kilchytska, Valeriya[UCL] Collaert, N. Jurczak, Malgorzata Nazarov, Alexei Flandre, Denis[UCL] (2006) NATO Advanced Research Workshop "Nanoscaled Semiconductor-on-Insulator Structures and Devices" — Sudak/Crimea (Ukrain)
24. • Article de périodique

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    Substrate bias effect linked to parasitic series resistance in multiple-gate SOI MOSFETs

    Rudenko, Tamara Kilchytska, Valeria[UCL] Collaert, Nadine Jurczak, Malgorzata Nazarov, Alexey Flandre, Denis[UCL] (2007) IEEE Electron Device Letters — Vol. 28, no. 9, p. 834-836 (2007)
25. • Communication

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    New evidence of interfacial oxide traps in n-type 4H- and 6H-SiC MOS structures

    Olafsson, H.O. Sveinbjornsson, E.O. Rudenko, Tamara Kilchytska, Valeriya[UCL] Tyagulski, I. Osiyuk, I. (2001) 2001 International conference on silicon carbide and related materials (ICSCRM 2001) — Tsukuba (Japan)

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