Chen, J.
Colinge, JP.
TFSOI (Thin-Film Silicon-On-Insulator) technology has made significant progress recently. In this work, the titanium SALICIDE (Self-Aligned siLICIDE) process has been studied, optimized and applied on a CMOS-compatible TFSOI technology for low-voltage, low-power microwave applications. The gate sheet resistance and total source/drain series resistance of a TFSOI NMOSFET with a 80 nm thick active silicon layer are 6.2 Omega/square and 700 Omega.mu m, respectively, with a 30 nm thick titanium disilicide on both the gate and source/drain areas. The maximum oscillation frequency, f(max), of a 0.75 mu m TFSOI NMOSFET fabricated with this technology is equal to 11 GHz for a supply voltage of 0.9 V.
Référence bibliographique |
Chen, J. ; Colinge, JP.. Study on titanium salicide process for thin-film SOI devices.Proceedings of the Symposium J on Advanced Materials for Interconnections of the 1996 E-MRS Spring Meeting Conference (STRASBOURG(France), Jun 04-07, 1996). In: Microelectronic Engineering, Vol. 33, no. 1-4, p. 189-194 (1997) |
Permalien |
http://hdl.handle.net/2078.1/62778 |