Advantages and Challenges of Advanced MOSFETs for Analog and RF Applications

Nowadays, two main contenders are widely recognized as able to satisfy ITRS requirements for the device downscalingtowards 20nm and beyond: (i) planar fully depleted (FD) silicon-on-insulator (SOI) with ultra-thin body and burried oxide (UTBB) MOSFETs; (ii) multiple-gate MOSFETs. This talk assesses these devices for the analog/RF applications through key figures such as transconductance, output conductance, intrinsic gain, cut-off frequencies. We do not conclude on the best choice for analog/RF, but highlight common features and specificities. Importance of wide-frequency band measeurements for proper device assessemnt is emphasized. Particular attention is paid to enormous impact of parasitic elements on device performance.