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Displaying 1 - 25 of 102 results.

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    • Journal article
    Revision of interface coupling in ultra-thin body silicon-on-insulator MOSFETs
    Rudenko, Tamara Nazarov, Alexei Kilchytska, Valeriya[UCL] Flandre, Denis[UCL] Popov, V. Ilnitsky, M. Lysenko, V. (2013) Semiconductor Physics, Quantum Electronics & Optoelectronics — Vol. 16, no.3, p. 300-309 (30/09/2013)
    • Journal article
    Review on double-gate MOSFETs and FinFETs modeling
    Cerdeira, Antonio Estrada, Magali Alvarado Pulido, José Joaquin Garduno, I. Contreras, E. Tinoco, J. Iniguez, Benjamin Kilchytska, Valeriya[UCL] Flandre, Denis[UCL] (2013) Facta Universitatis. Series Electronics and Energetics — Vol. 26, no. 3, p. 197-213 (December 2013)
    • Journal article
    Gate leakage currents model for FinFETs implemented in Verilog-A for electronic circuits design
    Garduno, Salvador I. Alvarado Pulido, José Joaquin Cerdeira, Antonio Estrada, Magali Kilchytska, Valeriya[UCL] Flandre, Denis[UCL] (2014) International Journal of Numerical Modelling: Electronic Networks, Devices and Fields — p. 15 (2014)
    • Journal article
    An analytical 3D model for short-channel effects in undoped FinFETs
    El Hamid, Hamdy Abd Iniguez, Benjamin Kilchytska, Valeriya[UCL] Flandre, Denis[UCL] Ismail, Yehea (2015) Journal of Computational Electronics — Vol. 14, no.2, p. 500-505 (02/2015)
    • Journal article
    Leakage Current and Low-Frequency Noise Analysis and reduction in a Suspended SOI Lateral p-i-n Diode
    Li, Guoli[UCL - Hunan University, Changsha/China] Kilchytska, Valeriya[UCL] André, Nicolas[UCL] Francis, Laurent[UCL] Zeng, Yun Flandre, Denis[UCL] (2017) IEEE Transactions on Electron Devices — , p. 8 (17/08/2017)
    • Journal article
    Development, characterisation and simulation of wafer bonded Si-on-SiC substrates
    Gammon, P.M. Chan, C.W. Li, F. Gity, F. Trajkovic, T. Pathirana, V. Flandre, Denis[UCL] Kilchytska, Valeriya[UCL] (2018) Materials Science in Semiconductor Processing — Vol. 78, p. 69-74 (2018)
    • Journal article
    High-temperature characteristics of zone-melting recrystallized silicon-on-insulator MOSFETs
    Lysenko, V.S. Nazarov, Alexei Kilchytska, Valeriya[UCL] Rudenko, Tamara Limanov, A.B. Colinge, Jean-Pierre (1998) Semiconductor Physics, Quantum Electronics & Optoelectronics — Vol. 1, no. 1, p. 101-107 (28/10/1998)
    • Journal article
    Characterization and modelling of single event transients in LDMOS-SOI FETs
    Alvarado, Jose Joaquin[UCL] Kilchytska, Valeriya[UCL] Boufouss, El Hafed[UCL] Flandre, Denis[UCL] (2011) Microelectronics Reliability — Vol. 51, no. 9-11, p. 2004–2009 (Septembre–Novembre 2011)
    • Journal article
    High-field current transport and charge trapping in buried oxide of SOI materials under high-field electron injection
    Nazarov, Alexei Kilchytska, Valeriya[UCL] Houk, Youri (2004) Journal of Telecommunications and Information Technology — Vol. 94, no. 1, p. 12 (2004)
    • Journal article
    On the high-temperature subthreshold slope of thin-film SOI MOSFETs
    Rudenko, Tamara Flandre, Denis[UCL] Kilchytska, Valeriya[UCL] Colinge, Jean-Pierre[UCL] Dessard, Vincent[UCL] (2002) IEEE Electron Device Letters — Vol. 23, no. 3, p. 148-150 (March 2002)
    • Journal article
    RF plasma annealing of the positive charge created by Fowler-Nordheim electron injection in buried oxide of SIMOX SOI structure
    Nazarov, Alexei Kilchytska, Valeriya[UCL] Barchuk, I.P. Tkachenko, A.S. Ashok, S. (2000) Journal of Vacuum Science & Technology. A: International Journal Devoted to Vacuum, Surfaces, and Films — Vol. 18, no.3, p. 1156-1164 (2000)

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