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Displaying 2 results.
    • Journal article
    A physically-based C-infinity-continuous model for accumulation-mode SOI pMOSFET's
    Iniguez, B.[UCL] Flandre, Denis[UCL] Gentinne, B.[UCL] Dessard, V.[UCL] (1999) IEEE Transactions on Electron Devices — Vol. 46, no. 12, p. 2295-2303 (1999)
    • Journal article
    Modeling and simulation of single- and multiple-gate 2-D MESFET's
    Iniguez, B. Lu, JQ Hurt, MJ Peatman, WCB Shur, MS (1999) IEEE Transactions on Electron Devices — Vol. 46, no. 8, p. 1742-1748 (1999)