User menu

Accès à distance ? S'identifier sur le proxy UCLouvain

Search

Displaying 22 results.
    • Journal article
    A physically-based C-infinity-continuous model for accumulation-mode SOI pMOSFET's
    Iniguez, B.[UCL] Flandre, Denis[UCL] Gentinne, B.[UCL] Dessard, V.[UCL] (1999) IEEE Transactions on Electron Devices — Vol. 46, no. 12, p. 2295-2303 (1999)
    • Journal article
    Modeling and simulation of single- and multiple-gate 2-D MESFET's
    Iniguez, B. Lu, JQ Hurt, MJ Peatman, WCB Shur, MS (1999) IEEE Transactions on Electron Devices — Vol. 46, no. 8, p. 1742-1748 (1999)
    • Journal article
    Unified 1/f noise SOI MOSFET modelling for circuit simulation
    Iniguez, B. Tambani, M Dessard, V.[UCL] Flandre, Denis[UCL] (1997) Electronics Letters — Vol. 33, no. 21, p. 1781-1782 (1997)
    • Journal article
    A physically-based C-infinity-continuous fully-depleted SOI MOSFET model for analog applications
    Iniguez, B. Ferreira, LF Gentinne, B. Flandre, Denis[UCL] (1996) IEEE Transactions on Electron Devices — Vol. 43, no. 4, p. 568-575 (1996)
    • Speech
    Improvement of sub-0.25 mu m fully-depleted SOI CMOS analog performance by thinning the Si film
    Neve, A. Dessard, V. Delatte, Pierre[UCL] Brodeoux, V. Iniguez, B. Rauly, E. Flandre, Denis[UCL] (2001) Silicon-On-Insulator Technology and Devices X. Proceedings of the Tenth International Symposium — Washington, DC (USA)
    • Journal article
    A charge-based continuous model for submicron graded-channel nMOSFET for analog circuit simulation
    de Souza, Michelly Flandre, Denis[UCL] Pavanello, MA Iniguez, B. (2005) Solid-State Electronics — Vol. 49, no. 10, p. 1683-1692 (2005)
    • Speech
    Investigation of single and double gate SOI MOSFETs in Accumulation Mode for enhanced performances and reduced technological drawbacks
    Rauly, E. Iniguez, B. Flandre, Denis[UCL] Raynaud, C. (2000) ESSDERC 2000. Proceedings of the 30th European Solid-State Device Research Conference — Cork (Ireland)
    • Speech
    Potential of surface accumulation mode for deep-submicron fully-depleted SOI CMOS technologies
    Iniguez, B. Rauly, E. Flandre, Denis[UCL] (2001) Silicon-On-Insulator Technology and Devices X. Proceedings of the Tenth International Symposium — Washington, DC (USA)
    • Journal article
    Investigation of deep submicron single and double gate SOI MOSFETs in accumulation mode for enhanced performance
    Rauly, E.[UCL] Flandre, Denis[UCL] Iniguez, B.[UCL] (2001) Electrochemical and Solid-State Letters — Vol. 4, no. 3, p. G28-G30 (2001)
    • Speech
    Leakage components in fully-depleted SOI CMOS technology: implications on IDDQ testing
    Iniguez, B. Raskin, Jean-Pierre[UCL] Simon, Pascal[UCL] Flandre, Denis[UCL] Segura, J. (2001) 2001 IEEE International Workshop on Defect Based Testing (DBT 2001) — Marina del Rey, Los Angeles (USA)
    • Journal article
    Self-heating and kink effects in a-Si : H thin film transistors
    Wang, L. Fjeldly, TA Iniguez, B. Slade, HC Shur, M (2000) IEEE Transactions on Electron Devices — Vol. 47, no. 2, p. 387-397 (2000)
    • Speech
    Finite element simulations of parasitic capacitances related to multiple-gate field-effect transistors architectures
    Moldovan, O. Lederer, Dimitri[UCL] Iniguez, B. Raskin, Jean-Pierre[UCL] (2008) IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems - SiRF 2008 — Orlando, Florida, USA
    • Speech
    Modélisation de bruit et performances de MOSFETs SOI totalement désertés
    Pailloncy, G. Iniguez, B. Dambrine, G. Dehan, Morin[UCL] Raskin, Jean-Pierre[UCL] (2004) Workshop action spécifique bruit – Bruit en régime linéaire et non-linéaire dans les composants et circuits de télécommunications — La Grande Motte, France
    • Speech
    Noise modelling of 0.25 µm fully depleted SOI MOSFETs
    Pailloncy, G. Dambrine, G. Danneville, F. Iniguez, B. Raskin, Jean-Pierre[UCL] (2003) 17th International Conference on Noise and Fluctuations – ICNF 2003 — Prague, Czech Republic
    • Speech
    Noise Modeling and Performance in 0.15 µm Fully Depleted SOI MOSFET
    Pailloncy, G. Iniguez, B. Dambrine, G. Dehan, Morin[UCL] Raskin, Jean-Pierre[UCL] (2004) SPIE Second International Symposium on Fluctuations and Noise — Gran Canaria, Spain
    • Speech
    Modélisation du bruit pour des MOSFETs 0.25 µm totalement désertés
    Pailloncy, G. Iniguez, B.[UCL] Raskin, Jean-Pierre[UCL] Dambrine, G. Danneville, F. (2003) XIIIème Journées Nationales Microondes — Lille, France
    • Speech
    Noise modeling and performance of SOI MOSFETs
    Danneville, F. Pailloncy, G. Iniguez, B. Raskin, Jean-Pierre[UCL] Dambrine, G. (2004) IEEE MTT-S International Microwave Symposium – Workshop on high frequency noise in advanced Silicon-based devices: from basics to state-of-the-art device and circuit performances — Fort Worth, Texas, USA
    • Speech
    SOI MOS models
    Iniguez, B.[UCL] Danneville, F. Raskin, Jean-Pierre[UCL] (2002) Biannual Agilent Workshop on modeling – IC-CAP 2002 — Berlin, Germany
    • Speech
    Deep-submicron DC to RF SOI MOSFET macro-model for designing non-linear RF circuits
    Iniguez, B.[UCL] Goffioul, Michael[UCL] Parvais, Bertrand[UCL] Raskin, Jean-Pierre[UCL] (2001) 6th International Workshop on Integrated Nonlinear Microwave and Millimeterwave circuits INMMC’2001 — Leuven, Belgium
    • Journal article
    Deep-submicron drain current to radio frequency silicon on insulator metal oxide semiconductor field-effect transistor macromodel for designing microwave circuits
    Iniguez, B. Raskin, Jean-Pierre[UCL] (2002) International Journal of R F and Microwave Computer-Aided Engineering — Vol. 12, no. 5, p. 428-438 (2002)
    • Journal article
    Noise modeling in fully depleted SOI MOSFETs
    Pailloncy, G. Iniguez, B. Dambrine, G. Raskin, Jean-Pierre[UCL] Danneville, F. (2004) Solid-State Electronics — Vol. 48, no. 5, p. 813-825 (2004)
    • Journal article
    Accurate prediction of the volume inversion impact on undoped Double Gate MOSFET capacitances
    Moldovan, O. Chaves, F.A. Jime nez, D. Raskin, Jean-Pierre[UCL] Iniguez, B. (2010) International Journal of Numerical Modelling: Electronic Networks, Devices and Fields — Vol. 23, no. 6, p. 447-457 (2010)